3DIC Opens a New Era of IC Packaging and TestingASE, SEMATECH, STATS ChipPAC, Tech Search International, Xilinx and leading equipment and materials companies to illustrate the technology roadmap at SEMICON Singapore
- Show and program registration opens. Early birds enjoy 30% off before April 2 -
In the process of 2.5D/3D IC commercialization, many challenges must be overcome to help manufacturers achieve the anticipated yield rates. SEMI is co-organizing a 2.5D/3D IC with Institute of Microelectronics (IME) at SEMICON Singapore 2012 featuring speakers from leading companies such as Aptina, ASE, Hitachi Chemical, Lam Research, Novellus, SEMATECH, Silecs International, SPTS, STATS ChipPAC, Tech Search International, Tezzaron Corporation and Xilinx to share their experiences in 2.5D and 3D ICs.The 2.5D/3D forum will be held on 24thApril, Marina Bay Sands, Singapore. Register before April 2nd to take advantage of 30% early bird discount. For more information about the forum, please visit: www.semiconsingapore.org
Moore’s law has reliably driven silicon scaling for several decades. As the semiconductor manufacturing world moves into the “More than Moore” 2.5D/3D space, a wealth of opportunities are becoming available that further increase the functionality and performance of semiconductor ICs. Enabled by 2.5D and 3D IC technology, designers can now design and build high-performance and energy-efficient systems using heterogeneous technologies such as CMOS (including multiple logic, memory technology nodes), MEMS, Si Photonics, etc. According to Yole D?veloppment, the shipment volume of 3D IC wafers will reach 10 million units in 2012.
One of the invited speakers, Dr. Ho-Ming Tong, general manager and chief R&D officer of ASE, noted: “Despite progress in 3DIC development over the past years, challenges remain in the areas of cost control, design, mass production and testing in the lead-up to commercialization. Given the readiness of silicon interposer-based 2.5DIC technology to move to the next stage, , its deployment will expedite migration from the 40-nm node to 28-nm. With computing and smart devices fueling growth of the market, commercialization of 2.5D and 3D ICs may take place in 2013.”
”The 3D IC technology, which is able to provide heterogeneous integration between memory and analog functions, will be a popular technology among future high-end mobile devices,” said SEMI Southeast Asia President Terry Tsao. “Through technology demonstrations at 3D IC Gallery and the 2.5D/3D IC forum, SEMI is partnering with IME, a leading semiconductor research and development institute, to introduce the latest technology developments into Singapore’s semiconductor industry.”
"To address the challenges of taking 2.5D/3D systems to high volume manufacturing, collaborative partnerships are very critical. IME has established strategic partnerships with leading players in the semiconductor ecosystem to co-develop cost effective 3D IC integration and process technologies in Singapore," said Professor Dim-Lee Kwong,Executive Director of IME. “Our new 300mm advanced packaging facility will provide deeper and broader capabilities to our partners to overcome the challenges in 3D IC.”
The 3D IC forum will feature a special emphasis on industry trends, manufacturing readiness, applications, roadmaps, and interdependencies with others in the eco-system.
The 3D IC packaging technology is widely expected to break Moore’s Law and meet the market’s requirements for shorter design period and time-to-market. Most major semiconductor companies, especially those involving in Wide I/O DRAM, expect the 3D IC technology to solve the bandwidth issue and reduce power consumption. Many major companies have announced their future 3D IC development plans. An example is TSMC’s plan to launch 3D IC packaging services in early 2013. Also, chip suppliers for mobile devices, such as Qualcomm and ST-Ericsson, have expressed their interests in the 3D IC packaging technology.[1]
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Karen Lo/SEMI
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[1]Source: http://www.digitimes.com/newregister/join.asp?view=Article&DATEPUBLISH=2011/12/02&PAGES=PD&SEQ=211
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